相关论文: Aluminum Single Electron Transistors with Islands …

Silicon quantum dot qubits show great promise but suffer from charge noise with a 1/f^\alpha spectrum, where f is frequency and \alpha \lesssim 1. It has recently been proposed that 1/f^\alpha noise spectra can emerge from a few thermally…

Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…

Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth…

We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we…

Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the…

We report on the low-frequency current fluctuations and electronic noise in thin-films made of bismuth selenide topological insulators. The films were prepared via the graphene-like mechanical exfoliation and used as the current conducting…

Seismic noise, generated by oceanic microseisms and other sources, illuminates the crust in a manner different from tectonic sources, and therefore provides independent information. The primary measurable is the two-point cross-correlation,…

We show that 1/f noise is produced in a 3D electron glass by charge fluctuations due to electrons hopping between isolated sites and a percolating network at low temperatures. The low frequency noise spectrum goes as \omega^{-\alpha} with…

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…

In this paper we report measurements of conductance fluctuations in single crystal samples of Si doped with P and B close to the critical composition of the metal insulator transition (n_c \approx 4 x 10^18 /cc). The measurements show that…

Low-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and…

We report results of investigation of the low-frequency excess noise in device channels made from topological insulators - a new class of materials with a bulk insulating gap and conducting surface states. The thin-film bismuth selenide…

Low frequency electrical noise measurements have been used to probe the electronic state of the perovskite-type manganese oxide Pr2/3Ca1/3MnO3 versus temperature and in the vicinity of the field-induced transition from the insulating,…

We investigate the noise properties of a superconducting single electron transistor (SSET) coupled to an harmonically driven resonator. Using a Langevin equation approach, we calculate the frequency spectrum of the SSET charge and calculate…

We present measurements of the low--temperature excess frequency noise of four niobium superconducting coplanar waveguide microresonators, with center strip widths $s_r$ ranging from 3 $\mu$m to 20 $\mu$m. For a fixed internal power, we…

Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to…

We find that if two superconducting islands of different number parity are linked by a tunnel junction the unpaired electron in the odd island has a tendency to tunnel into the even island. This process leads to fluctuations in time of the…

Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR)…

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport…

Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…