Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing
摘要
The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where quantum information processing outcomes depend on the location of a single electron on nearby quantum dots. In this paper we investigate various geometries of a SET in order to maximize the device's sensitivity to charge transfer between quantum dots. Through the use of finite element modeling we model the materials and geometries of an Al/Al2O3 SET measuring the state of quantum dots in the Si substrate beneath. The investigation is motivated by the quest to build a scalable quantum computer, though the methodology used is primarily that of circuit theory. As such we provide useful techniques for any electronic device operating at the classical/quantum interface.
引用
@article{arxiv.cond-mat/0501437,
title = {Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing},
author = {Vincent I. Conrad and Andrew D. Greentree and David N. Jamieson and Lloyd C. L. Hollenberg},
journal= {arXiv preprint arXiv:cond-mat/0501437},
year = {2007}
}
备注
13 pages, 17 figures