Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Mingyun Yuan; Feng Pan; Zhen Yang; T. J. Gilheart; Fei Chen; D. E. Savage; M. G. Lagally; M. A. Eriksson; A. J. Rimberg

doi:10.1063/1.3572033

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Mesoscale and Nanoscale Physics 2011-04-08 v1

Authors: Mingyun Yuan , Feng Pan , Zhen Yang , T. J. Gilheart , Fei Chen , D. E. Savage , M. G. Lagally , M. A. Eriksson , A. J. Rimberg

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Abstract

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a temperature of 0.3 K. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state.

Keywords

quantum dots field-effect transistors superconducting quantum interference devices

Cite

@article{arxiv.1102.4544,
  title  = {Si/SiGe quantum dot with superconducting single-electron transistor charge sensor},
  author = {Mingyun Yuan and Feng Pan and Zhen Yang and T. J. Gilheart and Fei Chen and D. E. Savage and M. G. Lagally and M. A. Eriksson and A. J. Rimberg},
  journal= {arXiv preprint arXiv:1102.4544},
  year   = {2011}
}

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4 pages, 3 figures

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Abstract

Keywords

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