We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e2/2CΣ∼ 250 μeV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.
@article{arxiv.cond-mat/0510373,
title = {An ion-implanted silicon single-electron transistor},
author = {V. C. Chan and D. R. McCamey and T. M. Buehler and A. J. Ferguson and D. J. Reilly and A. S. Dzurak and R. G. Clark and C. Yang and D. N. Jamieson},
journal= {arXiv preprint arXiv:cond-mat/0510373},
year = {2007}
}