Ion implanted Si:P double-dot with gate tuneable interdot coupling

V. C. Chan; T. M. Buehler; A. J. Ferguson; D. R. McCamey; D. J. Reilly; A. S. Dzurak; R. G. Clark; C. Yang; D. N. Jamieson

doi:10.1063/1.2364664

Ion implanted Si:P double-dot with gate tuneable interdot coupling

Mesoscale and Nanoscale Physics 2009-11-11 v1

Authors: V. C. Chan , T. M. Buehler , A. J. Ferguson , D. R. McCamey , D. J. Reilly , A. S. Dzurak , R. G. Clark , C. Yang , D. N. Jamieson

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Abstract

We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned from weak to strong coupling. In the weak interdot coupling regime, the system exhibits well-defined double-dot charging behavior. By contrast, in the strong interdot coupling regime, the system behaves as a single-dot.

Keywords

field-effect transistors charge transfer

Cite

@article{arxiv.cond-mat/0602538,
  title  = {Ion implanted Si:P double-dot with gate tuneable interdot coupling},
  author = {V. C. Chan and T. M. Buehler and A. J. Ferguson and D. R. McCamey and D. J. Reilly and A. S. Dzurak and R. G. Clark and C. Yang and D. N. Jamieson},
  journal= {arXiv preprint arXiv:cond-mat/0602538},
  year   = {2009}
}

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11 pages, 5 figures

Ion implanted Si:P double-dot with gate tuneable interdot coupling

Abstract

Keywords

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