Electrostically defined few-electron double quantum dot in silicon

W. H. Lim; H. Huebl; L. H. Willems van Beveren; S. Rubanov; P. G. Spizzirri; S. J. Angus; R. G. Clark; A. S. Dzurak

doi:10.1063/1.3124242

Electrostically defined few-electron double quantum dot in silicon

Mesoscale and Nanoscale Physics 2009-04-28 v1

Authors: W. H. Lim , H. Huebl , L. H. Willems van Beveren , S. Rubanov , P. G. Spizzirri , S. J. Angus , R. G. Clark , A. S. Dzurak

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Abstract

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.

Keywords

quantum dots and electron transport silicon quantum computing electronic structure

Cite

@article{arxiv.0904.0311,
  title  = {Electrostically defined few-electron double quantum dot in silicon},
  author = {W. H. Lim and H. Huebl and L. H. Willems van Beveren and S. Rubanov and P. G. Spizzirri and S. J. Angus and R. G. Clark and A. S. Dzurak},
  journal= {arXiv preprint arXiv:0904.0311},
  year   = {2009}
}

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4 pages, 3 figures, accepted for Applied Physics Letters

Electrostically defined few-electron double quantum dot in silicon

Abstract

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