Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
@article{arxiv.cond-mat/9802227,
title = {Quantum Mott transition in a silicon quantum dot},
author = {S. V. Vyshenski and U. Zeitler and R. J. Haug},
journal= {arXiv preprint arXiv:cond-mat/9802227},
year = {2007}
}