Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide
Mesoscale and Nanoscale Physics
2009-11-07 v2
Abstract
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
Keywords
Cite
@article{arxiv.cond-mat/0210104,
title = {Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide},
author = {S. V. Vyshenski and U. Zeitler and R. J. Haug},
journal= {arXiv preprint arXiv:cond-mat/0210104},
year = {2009}
}
Comments
4 pages, 3 figures