Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures
Abstract
Percolation phenomena are investigated and discussed in three kinds of nanostructures: first two are nanocrystalline silicon-based systems, Si nanodots embedded in amorphous SiO2 matrix and porous silicon formed by an oxidized nanowire network, and the third consisting of a multi-walled carbon nanotube network embedded in amorphous SiN. The current-voltage characteristics measured on first two systems present voltage percolation thresholds with the same shape - a saturation plateau region of the current, followed by an abrupt increase. The current-voltage and conductance-voltage curves measured on multi-walled carbon nanotube network embedded in amorphous SiN present non-periodic and temperature independent oscillations. These oscillations are interpreted as voltage percolation thresholds.
Keywords
Cite
@article{arxiv.1106.4419,
title = {Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures},
author = {I. Stavarache},
journal= {arXiv preprint arXiv:1106.4419},
year = {2011}
}
Comments
12 pages, 8 figures