Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: a theoretical assessment
Materials Science
2016-08-17 v1
Abstract
Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption threshold which gives rise to enhancement in the optical switching parameter.
Keywords
Cite
@article{arxiv.0804.2581,
title = {Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: a theoretical assessment},
author = {Hasan Yıldırım and Ceyhun Bulutay},
journal= {arXiv preprint arXiv:0804.2581},
year = {2016}
}
Comments
8 pages, 3 figures, to be published in Optics Communications