We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.
@article{arxiv.cond-mat/0404399,
title = {Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot},
author = {L. J. Klein and K. A. Slinker and J. L. Truitt and S. Goswami and K. L. M. Lewis and S. N. Coppersmith and D. W. van der Weide and Mark Friesen and R. H. Blick and D. E. Savage and M. G. Lagally and Charles Tahan and Robert Joynt and M. A. Eriksson and J. O. Chu and J. A. Ott and P. M. Mooney},
journal= {arXiv preprint arXiv:cond-mat/0404399},
year = {2009}
}