Observation of excited states in a p-type GaAs quantum dot

Y. Komijani; M. Csontos; T. Ihn; K. Ensslin; D. Reuter; A. D. Wieck

doi:10.1209/0295-5075/84/57004

Observation of excited states in a p-type GaAs quantum dot

Mesoscale and Nanoscale Physics 2008-11-28 v1

Authors: Y. Komijani , M. Csontos , T. Ihn , K. Ensslin , D. Reuter , A. D. Wieck

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at T_hole = 185 mK. The charging energies as large as 2 meV evaluated from Coulomb diamond measurements together with the well resolved single-hole excited state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime.

Keywords

quantum dot Coulomb blockade single-hole regime excited states p-type GaAs scanning probe lithography

Cite

@article{arxiv.0809.1362,
  title  = {Observation of excited states in a p-type GaAs quantum dot},
  author = {Y. Komijani and M. Csontos and T. Ihn and K. Ensslin and D. Reuter and A. D. Wieck},
  journal= {arXiv preprint arXiv:0809.1362},
  year   = {2008}
}

Comments

5 pages, 5 figures

Observation of excited states in a p-type GaAs quantum dot

Abstract

Keywords

Cite

Comments

Related papers