Fabrication of undoped AlGaAs/GaAs electron quantum dots

Andrew M. See; Oleh Klochan; Adam P. Micolich; Alex R. Hamilton; Martin. Aagesen; Poul Erik Lindelof

doi:10.1063/1.3666394

Fabrication of undoped AlGaAs/GaAs electron quantum dots

Mesoscale and Nanoscale Physics 2015-05-28 v1

Authors: Andrew M. See , Oleh Klochan , Adam P. Micolich , Alex R. Hamilton , Martin. Aagesen , Poul Erik Lindelof

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Abstract

We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show typical Coulomb 'diamonds' free of any significant charge fluctuation noise. We also observe excited state transport in our device.

Keywords

quantum dot single electron transistor AlGaAs/GaAs heterostructure Coulomb blockade undoped

Cite

@article{arxiv.1106.5847,
  title  = {Fabrication of undoped AlGaAs/GaAs electron quantum dots},
  author = {Andrew M. See and Oleh Klochan and Adam P. Micolich and Alex R. Hamilton and Martin. Aagesen and Poul Erik Lindelof},
  journal= {arXiv preprint arXiv:1106.5847},
  year   = {2015}
}

Comments

3 pages, 5 figures, ICONN2010 conference paper

Fabrication of undoped AlGaAs/GaAs electron quantum dots

Abstract

Keywords

Cite

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