Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

T. Obata; K. Takeda; J. Kamioka; T. Kodera; W. M. Akhtar; K. Sawano; S. Oda; Y. Shiraki; S. Tarucha

Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

Mesoscale and Nanoscale Physics 2013-11-13 v1

Authors: T. Obata , K. Takeda , J. Kamioka , T. Kodera , W. M. Akhtar , K. Sawano , S. Oda , Y. Shiraki , S. Tarucha

Abstract

We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.

Keywords

quantum dots charge noise undoped Si/SiGe MOS structure Coulomb diamond Fourier transform 2DEG

Cite

@article{arxiv.1311.2681,
  title  = {Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer},
  author = {T. Obata and K. Takeda and J. Kamioka and T. Kodera and W. M. Akhtar and K. Sawano and S. Oda and Y. Shiraki and S. Tarucha},
  journal= {arXiv preprint arXiv:1311.2681},
  year   = {2013}
}

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Proceedings of the 12th Asia Pacific Physics Conference

Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

Abstract

Keywords

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