Fabrication and characterization of an induced GaAs single hole transistor

O. Klochan; J. C. H. Chen; A. P. Micolich; A. R. Hamilton; K. Muraki; Y. Hirayama

doi:10.1063/1.3336011

Fabrication and characterization of an induced GaAs single hole transistor

Mesoscale and Nanoscale Physics 2015-05-18 v1

Authors: O. Klochan , J. C. H. Chen , A. P. Micolich , A. R. Hamilton , K. Muraki , Y. Hirayama

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Abstract

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs.

Keywords

single hole transistor GaAs quantum dot Coulomb blockade charge noise modulation doping heterostructure

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@article{arxiv.1002.2998,
  title  = {Fabrication and characterization of an induced GaAs single hole transistor},
  author = {O. Klochan and J. C. H. Chen and A. P. Micolich and A. R. Hamilton and K. Muraki and Y. Hirayama},
  journal= {arXiv preprint arXiv:1002.2998},
  year   = {2015}
}

Comments

accepted for publication in Applied Physics Letters

Fabrication and characterization of an induced GaAs single hole transistor

Abstract

Keywords

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