The shot noise of the current through a single electron transistor (SET), coupled capacitively with an electronic box, is calculated, using the master equation approach. We show that the noise may be sub-Poissonian or strongly super-Poissonian, depending mainly on the box parameters and the gate. The study also supports the idea that not negative differential conductance, but charge accumulation in the quantum dot, responds for the super-Poissonian noise observed.
@article{arxiv.cond-mat/0512382,
title = {Super-Poissonian noise in a Coulomb blockade metallic quantum dot structure},
author = {V. Hung Nguyen and V. Lien Nguyen},
journal= {arXiv preprint arXiv:cond-mat/0512382},
year = {2013}
}