We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.
@article{arxiv.0812.0282,
title = {Measurement of the shot noise in a single electron transistor},
author = {Sergey Kafanov and Per Delsing},
journal= {arXiv preprint arXiv:0812.0282},
year = {2011}
}