Enhanced shot noise in resonant tunneling: theory and experiment
Strongly Correlated Electrons
2009-10-30 v1
Abstract
We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up to 6.6, and show that it is a dramatic effect caused by electron-electron interaction through Coulomb force, enhanced by the particular shape of the density of states in the well. We also present numerical results from the proposed theory, which are in agreement with the experiment, demonstrating that the model accounts for the relevant physics involved in the phenomenon.
Keywords
Cite
@article{arxiv.cond-mat/9709277,
title = {Enhanced shot noise in resonant tunneling: theory and experiment},
author = {G. Iannaccone and G. Lombardi and M. Macucci and B. Pellegrini},
journal= {arXiv preprint arXiv:cond-mat/9709277},
year = {2009}
}
Comments
4 pages, 4 figures