The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
@article{arxiv.cond-mat/0209523,
title = {Shot Noise in Tunneling through a Quantum Dot Array},
author = {G. Kiesslich and A. Wacker and E. Schoell and A. Nauen and F. Hohls and R. J. Haug},
journal= {arXiv preprint arXiv:cond-mat/0209523},
year = {2007}
}