We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor α with an average value of α≈0.8 consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in α can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.
@article{arxiv.cond-mat/0207266,
title = {Shot noise in self-assembled InAs quantum dots},
author = {A. Nauen and I. Hapke-Wurst and F. Hohls and U. Zeitler and R. J. Haug and K. Pierz},
journal= {arXiv preprint arXiv:cond-mat/0207266},
year = {2016}
}