In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO2 using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.
@article{arxiv.1304.2870,
title = {Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon},
author = {P. C. Spruijtenburg and J. Ridderbos and F. Mueller and A. W. Leenstra and M. Brauns and A. A. I. Aarnink and W. G. van der Wiel and F. A. Zwanenburg},
journal= {arXiv preprint arXiv:1304.2870},
year = {2013}
}
Comments
4 pages, 4 figures. This article has been submitted to Applied Physics Letters