We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.
@article{arxiv.1103.5891,
title = {Single-electron shuttle based on a silicon quantum dot},
author = {K. W. Chan and M. Mottonen and A. Kemppinen and N. S. Lai and K. Y. Tan and W. H. Lim and A. S. Dzurak},
journal= {arXiv preprint arXiv:1103.5891},
year = {2015}
}