Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a \mbox{1-GHz} sinusoidal wave in the absence of magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27~ppm.
@article{arxiv.1703.04795,
title = {Thermal-error regime in high-accuracy gigahertz single-electron pumping},
author = {R. Zhao and A. Rossi and S. P. Giblin and J. D. Fletcher and F. E. Hudson and M. Möttönen and M. Kataoka and A. S. Dzurak},
journal= {arXiv preprint arXiv:1703.04795},
year = {2017}
}