Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot
Mesoscale and Nanoscale Physics
2007-05-23 v1
Abstract
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward a dot strongly coupled to the leads. In addition to Coulomb blockade, when the dot is strongly coupled to the leads, we observe the appearance of a zero bias conductance peak due to the Kondo effect. The Kondo peak splits in a magnetic field, and the splitting scales linearly with the applied field. We also observe a transition from pure Coulomb blockade to peaks with a Fano lineshape.
Keywords
Cite
@article{arxiv.cond-mat/0612413,
title = {Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot},
author = {Levente J. Klein and Donald E. Savage and Mark A. Eriksson},
journal= {arXiv preprint arXiv:cond-mat/0612413},
year = {2007}
}
Comments
5 pages, 3 figures, to appear in Appl. Phys. Lett