Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

A. Wild; J. Sailer; J. Nützel; G. Abstreiter; S. Ludwig; D. Bougeard

doi:10.1088/1367-2630/12/11/113019

Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

Mesoscale and Nanoscale Physics 2015-05-19 v1 Materials Science Quantum Physics

Authors: A. Wild , J. Sailer , J. Nützel , G. Abstreiter , S. Ludwig , D. Bougeard

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Abstract

We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.

Keywords

quantum dots and electron transport silicon quantum computing quantum dots

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@article{arxiv.1007.2404,
  title  = {Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure},
  author = {A. Wild and J. Sailer and J. Nützel and G. Abstreiter and S. Ludwig and D. Bougeard},
  journal= {arXiv preprint arXiv:1007.2404},
  year   = {2015}
}

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20 pages, 8 figures

Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

Abstract

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