Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.
@article{arxiv.0710.3725,
title = {Single-electron quantum dot in Si/SiGe with integrated charge-sensing},
author = {C. B. Simmons and Madhu Thalakulam and Nakul Shaji and Levente J. Klein and Hua Qin and R. H. Blick and D. E. Savage and M. G. Lagally and S. N. Coppersmith and M. A. Eriksson},
journal= {arXiv preprint arXiv:0710.3725},
year = {2009}
}
Comments
3 pages, 3 figures, accepted version, to appear in Applied Physics Letters