The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 μm and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 μm) is (99.7±0.3)%. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in 28Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.
@article{arxiv.2306.16375,
title = {Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function},
author = {Ran Xue and Max Beer and Inga Seidler and Simon Humpohl and Jhih-Sian Tu and Stefan Trellenkamp and Tom Struck and Hendrik Bluhm and Lars R. Schreiber},
journal= {arXiv preprint arXiv:2306.16375},
year = {2024}
}