English

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Mesoscale and Nanoscale Physics 2024-03-15 v1 Quantum Physics

Abstract

The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 μ\mathrm{\mu}m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 μ\mathrm{\mu}m) is (99.7±0.3)%(99.7 \pm 0.3)\,\%. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in 28^{28}Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.

Keywords

Cite

@article{arxiv.2306.16375,
  title  = {Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function},
  author = {Ran Xue and Max Beer and Inga Seidler and Simon Humpohl and Jhih-Sian Tu and Stefan Trellenkamp and Tom Struck and Hendrik Bluhm and Lars R. Schreiber},
  journal= {arXiv preprint arXiv:2306.16375},
  year   = {2024}
}

Comments

11 pages, 6 figures

R2 v1 2026-06-28T11:17:06.891Z