Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

C. B. Simmons; Madhu Thalakulam; B. M. Rosemeyer; B. J. Van Bael; E. K. Sackmann; D. E. Savage; M. G. Lagally; R. Joynt; M. Friesen; S. N. Coppersmith; M. A. Eriksson

doi:10.1021/nl9014974

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

Mesoscale and Nanoscale Physics 2015-05-13 v1

Authors: C. B. Simmons , Madhu Thalakulam , B. M. Rosemeyer , B. J. Van Bael , E. K. Sackmann , D. E. Savage , M. G. Lagally , R. Joynt , M. Friesen , S. N. Coppersmith , M. A. Eriksson

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Abstract

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots.

Keywords

quantum dots and electron transport spin qubit silicon quantum computing

Cite

@article{arxiv.0905.1647,
  title  = {Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot},
  author = {C. B. Simmons and Madhu Thalakulam and B. M. Rosemeyer and B. J. Van Bael and E. K. Sackmann and D. E. Savage and M. G. Lagally and R. Joynt and M. Friesen and S. N. Coppersmith and M. A. Eriksson},
  journal= {arXiv preprint arXiv:0905.1647},
  year   = {2015}
}

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5 pages, 4 figures, submitted for publication

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

Abstract

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