Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

C. Payette; K. Wang; P. J. Koppinen; Y. Dovzhenko; J. C. Sturm; J. R. Petta

doi:10.1063/1.3678043

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

Mesoscale and Nanoscale Physics 2013-07-24 v2 Quantum Physics

Authors: C. Payette , K. Wang , P. J. Koppinen , Y. Dovzhenko , J. C. Sturm , J. R. Petta

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Abstract

We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.

Keywords

double quantum dots charge sensing Si/SiGe heterostructures quantum Hall effect electron transport depletion gate

Cite

@article{arxiv.1112.3014,
  title  = {Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures},
  author = {C. Payette and K. Wang and P. J. Koppinen and Y. Dovzhenko and J. C. Sturm and J. R. Petta},
  journal= {arXiv preprint arXiv:1112.3014},
  year   = {2013}
}

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