Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
Abstract
The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures. The calculation matches very well the experimental results over a wide range of electron density. The mobility typically varies between 1100 cm2/Vs in highly-doped structures and 2800 cm2/Vs at low electron density. The mobility is shown to be significantly influenced by the thickness of the spacer layer separating the strained Si channel from the pulse-doped supply layers. Then the electron transport is investigated in a gated modulation-doped structure in which the contribution of parasitic paths is negligible. The mobility is shown to be higher than in comparable ungated structures and dependent on the gate voltage, as a result of the electron density dependence of remote impurity screening.
Cite
@article{arxiv.cond-mat/0311030,
title = {Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation},
author = {F. Monsef and P. Dollfus and S. Galdin-Retailleau and H. -J. Herzog and T. Hackbarth},
journal= {arXiv preprint arXiv:cond-mat/0311030},
year = {2007}
}
Comments
26 pages, 1 table, 9 figures, revised version: new references and discussions added