Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities
Mesoscale and Nanoscale Physics
2015-06-11 v1
Abstract
A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a noninteracting gas with the renormalized mass and Lande factor, which allows experimentally verifiable predictions.
Keywords
Cite
@article{arxiv.1504.07537,
title = {Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities},
author = {V. T. Dolgopolov},
journal= {arXiv preprint arXiv:1504.07537},
year = {2015}
}