Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation
Abstract
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si1-xGex MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves mueff as a function of the effective vertical field Eeff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120 % for strained Si/ Si0.70Ge0.30, in accordance with best experimental data. The effect of the strained Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained Si/ Si1-xGex MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO2/ Si interface roughness, as well as surface roughness of the SiGe substrate on which strained Si is grown.
Cite
@article{arxiv.cond-mat/0411340,
title = {Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation},
author = {V. Aubry-Fortuna and P. Dollfus and S. Galdin-Retailleau},
journal= {arXiv preprint arXiv:cond-mat/0411340},
year = {2015}
}
Comments
25 pages, 8 figures, 1 table, revised version, discussions and references added