Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS2) transistors on bulged silicon nitride (SiNx) substrates that exhibit high electron mobilities up to ~900 cm2V−1s−1. The high mobility values were attributed to the suppression of electron-phonon scattering by the lattice distortion in the rippled MoS2 channel. While the results are compelling, this Matters Arising shows that the mobility values in ref. [1] are likely to be overestimated due to invasive voltage probes in the four-probe measurement setup, which causes a positive threshold voltage shift near the voltage probes and an artificial overestimation of apparent field-effect mobility.
@article{arxiv.2206.12787,
title = {Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes},
author = {Peng Wu},
journal= {arXiv preprint arXiv:2206.12787},
year = {2022}
}