In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS2 (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS2, and leads to the wrong conclusion.
@article{arxiv.2307.07787,
title = {Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes},
author = {Hong Kuan Ng and Du Xiang and Ady Suwardi and Guangwei Hu and Ke Yang and Yunshan Zhao and Tao Liu and Zhonghan Cao and Huajun Liu and Shisheng Li and Jing Cao and Qiang Zhu and Zhaogang Dong and Chee Kiang Ivan Tan and Dongzhi Chi and Cheng-Wei Qiu and Kedar Hippalgaonkar and Goki Eda and Ming Yang and Jing Wu},
journal= {arXiv preprint arXiv:2307.07787},
year = {2023}
}