Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior
Strongly Correlated Electrons
2009-10-31 v1 Mesoscale and Nanoscale Physics
Abstract
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.
Cite
@article{arxiv.cond-mat/0003429,
title = {Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior},
author = {S. Das Sarma and E. H. Hwang and Igor Zutic},
journal= {arXiv preprint arXiv:cond-mat/0003429},
year = {2009}
}
Comments
Presented at SIMD, Dec. 1999 in Hawaii. To be published in Superlattices and Microstructures, May 2000 issue