On the Origin of the Metal-Insulator Transition in 2D
Strongly Correlated Electrons
2008-02-03 v1
Abstract
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of the resistivity. These results evidence for the true metal-insulator transition in 2d, in apparent disagreement with the one-parameter scaling theory. Here we present a model that explains both effects in the framework of the spin-orbit interaction and provides a quantitative agreement with the experimental data.
Keywords
Cite
@article{arxiv.cond-mat/9707053,
title = {On the Origin of the Metal-Insulator Transition in 2D},
author = {V. M. Pudalov},
journal= {arXiv preprint arXiv:cond-mat/9707053},
year = {2008}
}
Comments
2 pages (postscript) including 1 table and 1 fig