Electric field scaling at a B=0 metal-insulator transition in two dimensions
Condensed Matter
2009-10-28 v2
Abstract
The non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at B=0. Comparison with the temperature scaling yields separate determinations of the correlation length exponent, \nu=1.5, and the dynamical exponent, z=0.8, close to the theoretical value z=1.
Keywords
Cite
@article{arxiv.cond-mat/9608101,
title = {Electric field scaling at a B=0 metal-insulator transition in two dimensions},
author = {S. V. Kravchenko and D. Simonian and M. P. Sarachik and Whitney Mason and J. E. Furneaux},
journal= {arXiv preprint arXiv:cond-mat/9608101},
year = {2009}
}
Comments
We have slightly changed discussion after a conversation with B. I. Shklovskii whom we thank very much