A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity versus temperature curves to near zero over a broad range of electron densities extending from nc to deep in the metallic regime where the high field conductivity is on the order of 10e2/h. The strong suppression (or "quenching") of the metallic behavior by a magnetic field sets an important constraint on theory.
@article{arxiv.cond-mat/0406566,
title = {Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field},
author = {Yeekin Tsui and S. A. Vitkalov and M. P. Sarachik and T. M. Klapwijk},
journal= {arXiv preprint arXiv:cond-mat/0406566},
year = {2009}
}