English

Reflection symmetry at a B=0 metal-insulator transition in two dimensions

Mesoscale and Nanoscale Physics 2009-10-28 v2
Authors: D. Simonian , S. V. Kravchenko , M. P. Sarachik
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Abstract

We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon MOSFET's. This symmetry implies that the transport mechanisms on the two sides are related.

Keywords

metal-insulator transition two-dimensional electron gas reflection symmetry silicon MOSFET resistivity conductivity

Cite

@article{arxiv.cond-mat/9611147,
  title  = {Reflection symmetry at a B=0 metal-insulator transition in two dimensions},
  author = {D. Simonian and S. V. Kravchenko and M. P. Sarachik},
  journal= {arXiv preprint arXiv:cond-mat/9611147},
  year   = {2009}
}

Comments

The substance of the paper is unchanged but we have given a more appropriate credit to earlier work

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