We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in 2D electron system. Both effects are prescribed to the Coulomb and spin-orbit interaction; the latter is anomalously enhanced by the broken inversion symmetry of the confining potential well.
@article{arxiv.cond-mat/9707076,
title = {Unconventional Metallic State in Two Dimensional System With Broken Inversion Symmetry},
author = {V. M. Pudalov},
journal= {arXiv preprint arXiv:cond-mat/9707076},
year = {2009}
}
Comments
7 pages RevTeX, 2 ps figures. Accepted for publication in JETP Lett., v.66 (1997)