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Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems

Strongly Correlated Electrons 2009-10-31 v1
Authors: Tohru Okamoto , K. Hosoya , S. Kawaji , A. Yagi , A. Yutani , Y. Shiraki
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Abstract

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.

Keywords

metal-insulator transition 2D electron system spin polarization Si-MOSFET Si/SiGe quantum well magnetotransport

Cite

@article{arxiv.cond-mat/9906425,
  title  = {Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems},
  author = {Tohru Okamoto and K. Hosoya and S. Kawaji and A. Yagi and A. Yutani and Y. Shiraki},
  journal= {arXiv preprint arXiv:cond-mat/9906425},
  year   = {2009}
}

Comments

3 pages, RevTeX, 4 eps-figures, conference paper (EP2DS-13)

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