Related papers: Interface charged impurity scattering in semicondu…
We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in…
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical…
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by…
Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder…
The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…
Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers.…
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections…
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…
We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering.…
The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…
We consider transport of dilute two-dimensional electrons, with temperature between Fermi and Debye temperatures. In this regime, electrons form a nondegenerate plasma with mobility limited by potential disorder. Different kinds of…
The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic…
Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
A version of the magnetoimpurity theory of the colossal magnetoresistance materials suitable for the double exchange ferromagnetic nondegenerate semiconductors is presented. It provides an explanation of the nonmonotonic temperature…
We study the temperature dependence of the electrical resistivity of interacting two-dimensional metallic systems. We perform a numerical simulation of the nonequilibrium state based on semiclassical Boltzmann transport theory. Through our…
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…