Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.
@article{arxiv.1304.5567,
title = {Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors},
author = {Deep Jariwala and Vinod K. Sangwan and Dattatray J. Late and James E. Johns and Vinayak P. Dravid and Tobin J. Marks and Lincoln J. Lauhon and Mark C. Hersam},
journal= {arXiv preprint arXiv:1304.5567},
year = {2015}
}