High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

Yang Cui; Run Xin; Zhihao Yu; Yiming Pan; Zhun-Yong Ong; Xiaoxu Wei; Junzhuan Wang; Haiyan Nan; Zhenhua Ni; Yun Wu; Tangsheng Chen; Yi Shi; Baigeng Wang; Gang Zhang; Yong-Wei Zhang; Xinran Wang

doi:10.1002/adma.201502222

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

Materials Science 2015-10-06 v1 Mesoscale and Nanoscale Physics

Authors: Yang Cui , Run Xin , Zhihao Yu , Yiming Pan , Zhun-Yong Ong , Xiaoxu Wei , Junzhuan Wang , Haiyan Nan , Zhenhua Ni , Yun Wu , Tangsheng Chen , Yi Shi , Baigeng Wang , Gang Zhang , Yong-Wei Zhang , Xinran Wang

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Abstract

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.

Keywords

charge carrier mobility transition metal dichalcogenides field-effect transistors

Cite

@article{arxiv.1510.00826,
  title  = {High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics},
  author = {Yang Cui and Run Xin and Zhihao Yu and Yiming Pan and Zhun-Yong Ong and Xiaoxu Wei and Junzhuan Wang and Haiyan Nan and Zhenhua Ni and Yun Wu and Tangsheng Chen and Yi Shi and Baigeng Wang and Gang Zhang and Yong-Wei Zhang and Xinran Wang},
  journal= {arXiv preprint arXiv:1510.00826},
  year   = {2015}
}

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17 pages, 4 figures

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

Abstract

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