Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Daniele Braga; Ignacio Gutiérrez Lezama; Helmuth Berger; Alberto F. Morpurgo

doi:10.1021/nl302389d

Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Mesoscale and Nanoscale Physics 2013-02-07 v1

Authors: Daniele Braga , Ignacio Gutiérrez Lezama , Helmuth Berger , Alberto F. Morpurgo

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Abstract

We realized ambipolar Field-Effect Transistors by coupling exfoliated thin flakes of tungsten disulphide (WS2) with an ionic liquid-dielectric. The devices show ideal electrical characteristics, including very steep sub-threshold slopes for both electrons and holes and extremely low OFF-state currents. Thanks to these ideal characteristics, we determine with high precision the size of the band-gap of WS2 directly from the gate-voltage dependence of the source-drain current. Our results demonstrate how a careful use of ionic liquid dielectrics offers a powerful strategy to study quantitatively the electronic properties of nano-scale materials.

Keywords

tungsten disulphide ionic liquid-gated transistors band-gap determination ambipolar field-effect transistors exfoliated thin flakes electronic properties

Cite

@article{arxiv.1302.1360,
  title  = {Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors},
  author = {Daniele Braga and Ignacio Gutiérrez Lezama and Helmuth Berger and Alberto F. Morpurgo},
  journal= {arXiv preprint arXiv:1302.1360},
  year   = {2013}
}

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21 pages, 5 figures

Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Abstract

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