Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it efficient material for spintronics, optoelectronics and valleytronics applications. In this work, we report electrical transport properties of monolayer WSe2 based field effect transistor with most needed multilayer Co/Pt ferromagnetic electrodes exhibiting perpendicular magnetic anisotropy. We studied contacts behaviour by performing I-V curve measurements and estimating Schottky barrier heights (SBHs). SBHs estimated from experimental data are found to be comparatively small, without using any tunnel barrier. This work expands the current understanding of WSe2 based devices and gives insight into the electrical behaviour of Co/Pt metal contacts, which can open great possibilities for spintronic/valleytronic applications.
@article{arxiv.2310.08955,
title = {Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts},
author = {S. Gupta and R. Ohshima and Y. Ando and T. Endo and Y. Miyata and M. Shiraishi},
journal= {arXiv preprint arXiv:2310.08955},
year = {2023}
}