Employing flux-grown single crystal WSe2, we report charge carrier scattering behaviors measured in h-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility μ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path (>500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.
@article{arxiv.2310.04624,
title = {Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$},
author = {Andrew Y. Joe and Kateryna Pistunova and Kristen Kaasbjerg and Ke Wang and Bumho Kim and Daniel A. Rhodes and Takashi Taniguchi and Kenji Watanabe and James Hone and Tony Low and Luis A. Jauregui and Philip Kim},
journal= {arXiv preprint arXiv:2310.04624},
year = {2023}
}