English

Impressive Electronic Transport in Be$_2$C Monolayer

Materials Science 2022-01-27 v3

Abstract

We present thermoelectric properties of Be2_2C monolayer based on density functional theory and semi-classical Boltzmann transport theory. Electronic structure calculations predict this material as a semiconductor with a direct bandgap of 2.0 eV computed using Gaussian-attenuating Perdew-Burke-Ernzerhof (Gau-PBE) hybrid functional. The Gau-PBE band structure is used to compute transport properties by solving the Boltzmann transport equation under the constant relaxation time approximation. In this work, we have explicitly determined the relaxation time by studying the electron-phonon interactions in the system to estimate absolute transport coefficients. Our results show that the monolayer possesses a high power factor (\sim 3.44 mW/mK2^2 @300K), similar to the commercial TE materials doped-Bi2_2Te3_3 and PbTe, suggesting that Be2_2C monolayer is a promising thermoelectric material.

Keywords

Cite

@article{arxiv.2003.07400,
  title  = {Impressive Electronic Transport in Be$_2$C Monolayer},
  author = {Gautam Sharma and K. C. Bhamu},
  journal= {arXiv preprint arXiv:2003.07400},
  year   = {2022}
}

Comments

19 pages, 7 figures

R2 v1 2026-06-23T14:16:39.120Z