Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzman transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K2m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both of its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) band gap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.
@article{arxiv.1705.06688,
title = {Two-dimensional InSe as a potential thermoelectric material},
author = {Nguyen T. Hung and Ahmad R. T. Nugraha and R. Saito},
journal= {arXiv preprint arXiv:1705.06688},
year = {2017}
}
Comments
5 pages, 2 figures, some typos have been corrected