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We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…

Mesoscale and Nanoscale Physics · Physics 2014-08-22 Dmitry Ovchinnikov , Adrien Allain , Ying-Sheng Huang , Dumitru Dumcenco , Andras Kis

We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find that the removal of a layer of poly(methyl methacrylate) or…

Mesoscale and Nanoscale Physics · Physics 2020-05-01 Francesca Urban , Lisanne Peters , Nadia Martucciello , Niall McEvoy , Antonio Di Bartolomeo

We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the…

Materials Science · Physics 2022-07-27 Yonglan Hu , Tie Yang , Dengfeng Li , Guangqian Ding , Chaochao Dun , Dandan Wu , Xiaotian Wang

We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under…

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties…

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of…

To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel…

We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…

Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels it is intrinsic and shows ambipolar transport. This opens up…

Mesoscale and Nanoscale Physics · Physics 2014-07-18 Adrien Allain , Andras Kis

Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…

Materials Science · Physics 2016-05-02 Bilu Liu , Yuqiang Ma , Anyi Zhang , Liang Chen , Ahmad N. Abbas , Yihang Liu , Chenfei Shen , Haochuan Wan , Chongwu Zhou

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…

Using density-functional theory calculations, the atomic and electronic structure of single-layer WS_2 attached to Zr and Co contacts are determined. Both metals form stable interfaces that are promising as contacts for injection of n-type…

Mesoscale and Nanoscale Physics · Physics 2019-09-27 Hamideh Kahnouji , Peter Kratzer , S. Javad Hashemifar

We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-{\kappa} gate dielectrics. The top-gated monolayer…

Mesoscale and Nanoscale Physics · Physics 2012-06-22 Hui Fang , Steven Chuang , Ting Chia Chang , Kuniharu Takei , Toshitake Takahashi , Ali Javey

Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and…

We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional (2D) lattice,…

Mesoscale and Nanoscale Physics · Physics 2015-06-17 Kui Gong , Lei Zhang , Dongping Liu , Lei Liu , Yu Zhu , Yonghong Zhao , Hong Guo

We present thermoelectric properties of Be$_2$C monolayer based on density functional theory and semi-classical Boltzmann transport theory. Electronic structure calculations predict this material as a semiconductor with a direct bandgap of…

Materials Science · Physics 2022-01-27 Gautam Sharma , K. C. Bhamu

The recent experimental realization of a high quality WSe$% _{2} $ leads to the possibility of magneto-optical measurements and the manipulation of the spin and valley degrees of freedom. We study the influence of the very strong spin-orbit…

Mesoscale and Nanoscale Physics · Physics 2016-07-26 M. Tahir , P. Vasilopoulos

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

Mesoscale and Nanoscale Physics · Physics 2013-06-25 Branimir Radisavljevic , Andras Kis

Td-WTe2 is a topological Weyl semimetal. WTe2 in the orthorhombic structure is stable at room temperature. Elastic, electronic, bonding, and optoelectronic properties of WTe2 have been investigated in detail in this work using the density…

Materials Science · Physics 2020-12-01 B. Rahman Rano , Ishtiaque M. Syed , S. H. Naqib

Here, we have identified the monolayer phase of Bi2O2Se as a promising two-dimensional semiconductor with ultra-high carrier mobility and giant electric polarization. Due to the strong reconstruction originated from the interlayer…

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